inchange semiconductor isc product specification isc silicon pnp power transistor MJ21193 description total harmonic distortion characterized high dc current gain high area of safe operation applications designed for high power audio output, disk head positioners and linear applications. absolute maximum ratings(ta=25 ) symbol parameter value unit v cbo collector-emitter voltage -400 v v ceo collector-emitter voltage -250 v v ebo emitter-base voltage -5 v i c collector current-continuous -16 a i cm collector current-pulsed -30 a i b b base current-continuous -5 a p d total power dissipation (t c =25 ) 250 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermalresistance junction to case 0.7 /w isc website www.iscsemi.cn www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor MJ21193 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-100ma; i b =0 b -250 v v ce (sat)-1 collector-emitter saturation voltage i c =-8a ;i b =-0.8a b -1.4 v v ce (sat)-2 collector-emitter saturation voltage i c =-16a ;i b =-3.2a -4 v v be (on) base-emitter on voltage i c =-8a ; v ce =-5v -2.2 v i ceo collector cutoff current v ce =-200v,i b =0 -0.1 ma i cex collector cutoff current v ce = -250v; v be(off) = -1.5v -0.1 ma i ebo emitter cutoff current v eb =-5v; i c =0 -100 a h fe-1 dc current gain i c =-8a; v ce =-5v 25 75 h fe-2 dc current gain i c =-16a; v ce =-5v 8 c ob collector capacitance i e = 0; f=1mhz ; v cb =-10v 500 pf f t current gain-bandwidth product i c =-1a ;v ce =-10v; f test =1mhz 4 mhz isc website www.iscsemi.cn 2 www.iscsemi.cn
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